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SI4666DY-T1-GE3 - Vishay

Description: Vishay SI4666DY-T1-GE3 N-channel MOSFET Transistor, 16.5 A, 25 V, 8-Pin SOIC

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SI4666DY-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI4666DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW): 8-LEAD
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3D Models
SI4666DY-T1-GE3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW): 8-LEAD
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SI4666DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4666DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SO-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    16.5 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4666DY-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI4666DY-T1-GE3 should minimize parasitic inductance and capacitance. Keep the input and output traces short and away from each other, and use a solid ground plane to reduce noise. A 4-layer PCB with a dedicated power plane and a separate ground plane is recommended.
  • The SI4666DY-T1-GE3 requires a bias voltage of 2.5V to 5.5V. Ensure that the bias voltage is stable and within the recommended range. A decoupling capacitor of 10nF to 100nF should be placed close to the device to filter out noise and ripple.
  • The SI4666DY-T1-GE3 is specified to operate up to 100 MHz, but it can be used at higher frequencies with some degradation in performance. However, it's recommended to consult with Vishay's application engineers for specific guidance on operating the device above 100 MHz.
  • The SI4666DY-T1-GE3 has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. The device's thermal resistance (RθJA) is 125°C/W, so proper thermal management is crucial to prevent overheating.
  • Yes, the SI4666DY-T1-GE3 is a sensitive device and requires proper ESD protection. Handle the device in an ESD-controlled environment, and use ESD-safe tools and materials. Ensure that the device is properly grounded during handling and assembly.

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SI4666DY-T1-GE3 Overview

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