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SI4812BDY-T1-E3 - Vishay

Description: SI4812BDY-T1-E3, N-channel MOSFET Transistor 7.3 A 30 V, 8-Pin SOIC

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SI4812BDY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4812BDY-T1-E3 - Vishay  - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI4812BDY-T1-E3 Details

  • Manufacturer Part Number:

    SI4812BDY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1.25 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.3 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    45 ns

  • Turn-on Time-Max (ton):

    45 ns

SI4812BDY-T1-E3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper area for the thermal pad, with multiple vias to the bottom layer to dissipate heat efficiently. Additionally, keeping the component away from other heat sources and using a thermal relief pattern can help.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink, improving airflow, and reducing power dissipation to minimize thermal stress.
  • The SI4812BDY-T1-E3 has an ESD rating of Human Body Model (HBM) ±2 kV and Charged Device Model (CDM) ±1 kV. To prevent ESD damage, handle the device with an anti-static wrist strap, use an ESD-safe workstation, and avoid touching the pins or leads.
  • The SI4812BDY-T1-E3 is an industrial-grade device, but it's not specifically designed for high-reliability or automotive applications. For such applications, consider using devices with higher reliability ratings, such as AEC-Q100 qualified devices.
  • The recommended soldering profile for the SI4812BDY-T1-E3 is a peak temperature of 260°C (500°F) for 10-30 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).

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SI4812BDY-T1-E3 Overview

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