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SI4850BDY-T1-GE3 - Vishay

Description: VISHAY - SI4850BDY-T1-GE3 - MOSFET, N-CH, 60V, 11.3A, SOIC

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SI4850BDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW): 8 LEAD
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SI4850BDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW): 8 LEAD
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SI4850BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4850BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOIC, SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11.3 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11.3 A

  • Drain-source On Resistance-Max:

    0.0195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4.5 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    65 ns

  • Turn-on Time-Max (ton):

    75 ns

SI4850BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4850BDY-T1-GE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI4850BDY-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 2.7V and 5.5V, and keep the junction temperature below 150°C. Also, ensure the device is operated within its specified frequency range of 10kHz to 50MHz.
  • The maximum power dissipation of the SI4850BDY-T1-GE3 is 250mW. However, it's essential to consider the thermal resistance of the package and the PCB design to ensure the device operates within its recommended temperature range.
  • Yes, the SI4850BDY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is suitable for use in harsh environments.
  • To prevent ESD damage, handle the SI4850BDY-T1-GE3 with ESD-protective equipment, such as wrist straps or mats. Ensure the device is stored in an ESD-protective package, and avoid touching the pins or leads during handling.

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SI4850BDY-T1-GE3 Overview

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