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SI4850EY-T1-E3 - Vishay

Description: SI4850EY-T1-E3, N-channel MOSFET Transistor 6 A 60 V, 8-Pin SOIC

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SI4850EY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4850EY-T1-E3 - Vishay  - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI4850EY-T1-E3 Details

  • Manufacturer Part Number:

    SI4850EY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOP, SOIC-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    74 ns

  • Turn-on Time-Max (ton):

    40 ns

SI4850EY-T1-E3 Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to have a solid copper plane under the device, and to use thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, keeping the PCB layout symmetrical and avoiding thermal bottlenecks can help to reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, derating the device's power dissipation according to the temperature derating curve in the datasheet can help to prevent overheating.
  • The recommended soldering conditions for the SI4850EY-T1-E3 are: peak temperature of 260°C, soldering time of 10-15 seconds, and a soldering iron temperature of 350°C. It is also recommended to use a solder with a melting point of 217°C or higher.
  • To prevent ESD damage, it is recommended to handle the device in an ESD-protected environment, use ESD-protective packaging, and ground oneself before handling the device. Additionally, using an ESD wrist strap or mat can help to dissipate static electricity.
  • The recommended storage conditions for the SI4850EY-T1-E3 are: temperature range of -40°C to 125°C, humidity of 60% or less, and protection from direct sunlight and moisture. It is also recommended to store the device in its original packaging or an ESD-protective bag.

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SI4850EY-T1-E3 Overview

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