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SI4850EY-T1-GE3 - Vishay

Description: Vishay SI4850EY-T1-GE3 N-channel MOSFET Transistor, 8.5 A, 60 V, 8-Pin SOIC

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SI4850EY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SI4850EY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SO8
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SI4850EY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4850EY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOP, SOIC-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    74 ns

  • Turn-on Time-Max (ton):

    40 ns

SI4850EY-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI4850EY-T1-GE3 should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and consider derating the device's power handling according to the datasheet's thermal derating curve.
  • The recommended soldering conditions for the SI4850EY-T1-GE3 are: peak temperature 260°C, time above 217°C 30 seconds, and time above 183°C 90 seconds. Use a solder with a melting point above 217°C.
  • To prevent EOS damage, ensure that the device is handled and stored in an electrostatic discharge (ESD) protective environment. Use ESD-protective packaging, wrist straps, and mats during handling and assembly.
  • Store the SI4850EY-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 30°C, with a relative humidity below 60%.

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SI4850EY-T1-GE3 Overview

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For a full list of alternate parts for SI4850EY-T1-GE3, check out Findchips.com