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SI4864DY-T1-GE3 - Vishay

Description: MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V

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SI4864DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4864DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI4864DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4864DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    350 ns

  • Turn-on Time-Max (ton):

    125 ns

SI4864DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SI4864DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a recommended pad spacing of 0.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure the reliability of SI4864DY-T1-GE3 in high-temperature applications, it's crucial to follow the recommended operating temperature range of -55°C to 150°C. Additionally, ensure proper thermal management by providing adequate heat sinking, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage for SI4864DY-T1-GE3 is 20V. Exceeding this voltage may cause permanent damage to the device. It's essential to ensure that the voltage supply does not exceed the recommended maximum voltage to prevent device failure.
  • To handle ESD protection for SI4864DY-T1-GE3, follow proper handling and storage procedures to prevent electrostatic discharge. Use ESD-safe materials, such as ESD-safe trays and bags, and ensure that all personnel handling the devices are grounded. Additionally, consider implementing ESD protection circuits in your design to prevent damage from electrostatic discharge.
  • The typical lead time for SI4864DY-T1-GE3 may vary depending on the region, distributor, and availability. However, as a general guideline, the lead time is usually around 8-12 weeks. It's recommended to check with authorized distributors or Vishay Intertechnologies directly for the most up-to-date lead time information.

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SI4864DY-T1-GE3 Overview

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