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SI4925BDY-T1-GE3 - Vishay

Description: MOSFET 30V 7.1A 2.0W 25mohm @ 10V

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SI4925BDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead soic
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SI4925BDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - 8 lead soic
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SI4925BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4925BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4925BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the component placement and routing symmetrical can help reduce thermal gradients.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material. Additionally, consider using a thermocouple or temperature sensor to monitor the device temperature.
  • The SI4925BDY-T1-GE3 has built-in ESD protection, but it's still essential to follow standard ESD handling precautions, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging. Avoid touching the device pins or handling the device in a way that could generate static electricity.
  • The SI4925BDY-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or aerospace applications with proper qualification and testing. It's essential to consult with Vishay Intertechnologies and follow their guidelines for using commercial-grade devices in high-reliability applications.
  • The recommended soldering conditions for the SI4925BDY-T1-GE3 are a peak temperature of 260°C, with a soldering time of 10-15 seconds. For rework, use a low-temperature soldering iron (around 200°C) and avoid applying excessive heat or force, which can damage the device.

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SI4925BDY-T1-GE3 Overview

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Part Image SI4925BDY-T1-E3 Vishay Siliconix

TRANSISTOR 5300 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal