HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, THIN, POWERPAK, CHIPFET-8
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.4
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
12 A
Drain-source On Resistance-Max:
0.0145 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-N3
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
31 W
Pulsed Drain Current-Max (IDM):
40 A
Surface Mount:
YES
Terminal Finish:
MATTE TIN
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SI5418DU-T1-GE3 Frequently Asked Questions (FAQs)
The recommended PCB footprint for the SI5418DU-T1-GE3 is a standard QFN-16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
To ensure reliability in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its recommended operating temperature range of -40°C to 150°C.
The SI5418DU-T1-GE3 has built-in ESD protection, but it is still essential to follow proper ESD handling precautions during assembly and testing, such as using ESD-safe workstations, wrist straps, and packaging materials.
While the SI5418DU-T1-GE3 is designed for high-frequency applications, its performance may degrade above 1 GHz. For frequencies above 1 GHz, it is recommended to consult with Vishay Intertechnologies' application engineers or consider alternative devices specifically designed for high-frequency applications.
The recommended soldering and rework conditions for the SI5418DU-T1-GE3 are outlined in the JEDEC standard J-STD-020D.1. It is essential to follow these guidelines to prevent damage to the device during the assembly process.
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SI5418DU-T1-GE3 Overview
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