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SI5442DU-T1-GE3 - Vishay

Description: MOSFETs 20V Vds 8V Vgs PowerPAK ChipFET

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SI5442DU-T1-GE3 Details

  • Manufacturer Part Number:

    SI5442DU-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    115 pF

  • JESD-30 Code:

    R-PDSO-N3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    PURE MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    40 ns

SI5442DU-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI5442DU-T1-GE3 should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating guidelines for the device. Additionally, consider using a thermal interface material with a high thermal conductivity.
  • The recommended soldering conditions for the SI5442DU-T1-GE3 are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350°C. It's essential to follow these conditions to prevent damage to the device.
  • While the SI5442DU-T1-GE3 is a high-performance device, it may not meet the specific requirements for high-reliability or aerospace applications. It's essential to consult with Vishay Intertechnologies or a qualified representative to determine the device's suitability for such applications.
  • The SI5442DU-T1-GE3 is an ESD-sensitive device and requires proper handling and storage procedures to prevent damage. It's recommended to follow standard ESD handling practices, such as using wrist straps, anti-static bags, and ESD-safe workstations.

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SI5442DU-T1-GE3 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI544, or try a keyword search, such as Power Field-Effect Transistors

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