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SI5459DU-T1-GE3 - Vishay

Description: MOSFET P-CH 20V 8A CHIPFET

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SI5459DU-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPak ChipFet Single
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SI5459DU-T1-GE3 - Vishay  - 3D model - Other - PowerPak ChipFet Single
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SI5459DU-T1-GE3 Details

  • Manufacturer Part Number:

    SI5459DU-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    10.9 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    PURE MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5459DU-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI5459DU-T1-GE3 is a standard QFN-16 package with a 3x3 mm body size and 0.5 mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Also, follow proper thermal design and layout guidelines to minimize thermal resistance and ensure adequate heat dissipation.
  • The SI5459DU-T1-GE3 has built-in ESD protection, but it's still recommended to follow proper ESD handling and storage procedures to prevent damage. The device can withstand ESD pulses up to 2 kV according to the Human Body Model (HBM) and 250 V according to the Machine Model (MM).
  • Yes, the SI5459DU-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard and is manufactured in accordance with IATF 16949 quality management system standards.
  • The optimal input capacitance for the SI5459DU-T1-GE3 depends on the specific application and operating conditions. As a general guideline, a 10 nF to 100 nF input capacitor is recommended to ensure stable operation and minimize noise sensitivity.

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SI5459DU-T1-GE3 Overview

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