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SI5468DC-T1-GE3 - Vishay

Description: Vishay SI5468DC-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 8-Pin 1206 ChipFET

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SI5468DC-T1-GE3 - Vishay PCB footprint - Other - Other - SI5468DC-T1-GE3-1
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SI5468DC-T1-GE3 - Vishay  - 3D model - Other - SI5468DC-T1-GE3-1
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SI5468DC-T1-GE3 Details

  • Manufacturer Part Number:

    SI5468DC-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5.7 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5468DC-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI5468DC-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-10365.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this includes connecting the input pins (VIN and VCC) to a stable voltage source, and ensuring the output pin (VOUT) is properly decoupled with a capacitor. Additionally, consult the application note AN-10365 for specific biasing and layout recommendations.
  • The maximum allowed power dissipation for the SI5468DC-T1-GE3 is dependent on the ambient temperature and the thermal resistance of the package. According to the datasheet, the maximum power dissipation is 1.4W at an ambient temperature of 25°C. However, this value can be derated for higher temperatures. Consult the datasheet for the thermal derating curve.
  • The SI5468DC-T1-GE3 is rated for operation up to 125°C junction temperature. However, the device's performance and reliability may degrade at higher temperatures. Consult the datasheet for the recommended operating temperature range and thermal derating curve. Additionally, consider using a heat sink or thermal management techniques to ensure the device operates within its recommended temperature range.
  • To troubleshoot issues with the SI5468DC-T1-GE3, follow a systematic approach: 1) Verify the input voltage and current, 2) Check the output voltage and current, 3) Ensure proper decoupling and layout, 4) Consult the datasheet and application notes for specific troubleshooting guidelines, and 5) Contact Vishay Intertechnologies' technical support if the issue persists.

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