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SI5504BDC-T1-E3 - Vishay

Description: Vishay SI5504BDC-T1-E3 N/P-channel MOSFET Transistor, 8-Pin 1206

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SI5504BDC-T1-E3 - Vishay PCB footprint - Other - Other - SI5504BDC-T1-E3-1
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SI5504BDC-T1-E3 - Vishay  - 3D model - Other - SI5504BDC-T1-E3-1
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SI5504BDC-T1-E3 Details

  • Manufacturer Part Number:

    SI5504BDC-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.12 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5504BDC-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI5504BDC-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure reliability in high-temperature applications, ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management practices, such as using a heat sink or thermal interface material.
  • The maximum allowed voltage on the input pins of the SI5504BDC-T1-E3 is 5.5V, exceeding which may cause damage to the device.
  • Yes, the SI5504BDC-T1-E3 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • To prevent electrostatic discharge (ESD) damage, handle the SI5504BDC-T1-E3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device pins or handling the device in environments with high electrostatic potential.

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SI5504BDC-T1-E3 Overview

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Part Image SI5504BDC-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI5504BDC-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET