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SI5504BDC-T1-GE3 - Vishay

Description: Vishay SI5504BDC-T1-GE3 Dual N/P-channel MOSFET Transistor, 8-Pin 1206 ChipFET

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SI5504BDC-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 1206-8  pin
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3D Models
SI5504BDC-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - 1206-8  pin
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SI5504BDC-T1-GE3 Details

  • Manufacturer Part Number:

    SI5504BDC-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.12 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5504BDC-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI5504BDC-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed voltage on the input pins of the SI5504BDC-T1-GE3 is 5.5V. Exceeding this voltage may cause damage to the device or affect its performance.
  • The SI5504BDC-T1-GE3 is designed for low-frequency applications up to 100 kHz. For high-frequency applications, it is recommended to consult with the manufacturer or consider alternative devices specifically designed for high-frequency use.
  • To prevent ESD damage, handle the SI5504BDC-T1-GE3 with ESD-protective equipment, such as wrist straps or mats, and follow proper handling and storage procedures. Avoid touching the device's pins or exposing it to static electricity.

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SI5504BDC-T1-GE3 Overview

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Part Image SI5504BDC-T1-GE3 Vishay Siliconix

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Part Image SI5504BDC-T1-E3 Vishay Siliconix

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