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SI5517DU-T1-GE3 - Vishay

Description: MOSFET 20V Vds 8V Vgs PowerPAK ChipFET

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SI5517DU-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI5517DU-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® ChipFET®
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3D Models
SI5517DU-T1-GE3 - Vishay - 3D model - Other - PowerPAK® ChipFET®
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SI5517DU-T1-GE3 Details

  • Manufacturer Part Number:

    SI5517DU-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, POWERPAK, CHIPFET-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    8.3 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5517DU-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI5517DU-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI5517DU-T1-GE3 operates within its recommended operating conditions, maintain a voltage supply between 1.8V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the device is operated within its specified frequency range.
  • The maximum allowable power dissipation for the SI5517DU-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • To prevent electrostatic discharge (ESD) damage, handle the SI5517DU-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposed die.
  • Store the SI5517DU-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.

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SI5517DU-T1-GE3 Overview

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