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SI5936DU-T1-GE3 - Vishay

Description: Vishay SI5936DU-T1-GE3 Dual N-channel MOSFET Transistor, 6 A, 30 V, 8-Pin PowerPAK ChipFET

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PCB Footprints
SI5936DU-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® ChipFET® Dual
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3D Models
SI5936DU-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® ChipFET® Dual
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SI5936DU-T1-GE3 Details

  • Manufacturer Part Number:

    SI5936DU-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI5936DU-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI5936DU-T1-GE3 can be found in the Vishay Intertechnologies' application note AN10343, which provides a detailed layout and land pattern recommendation for optimal performance and thermal management.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies' application note AN10343. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
  • The SI5936DU-T1-GE3 is rated for operation from -55°C to 150°C (TJ), but it's essential to consider the derating curves and thermal management guidelines provided in the datasheet to ensure reliable operation within the specified temperature range.
  • While the SI5936DU-T1-GE3 is a high-performance device, it's essential to consult with Vishay Intertechnologies' sales team or a qualified representative to discuss the specific requirements and qualifications for high-reliability or aerospace applications.
  • To prevent electrostatic discharge (ESD) damage, follow proper ESD handling and storage procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Refer to the Vishay Intertechnologies' application note AN8811 for more information on ESD protection.

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SI5936DU-T1-GE3 Overview

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