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SI7101DN-T1-GE3 - Vishay

Description: VISHAY - SI7101DN-T1-GE3 - MOSFET, P-CH, 30V, 35A, PPAK1212-8

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SI7101DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7101DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7101DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7101DN-T1-GE3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The SI7101DN-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage. The device is rated for human body model (HBM) ESD protection up to 2 kV.
  • The SI7101DN-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper qualification and testing. Consult with Vishay Intertechnologies for specific guidance on using this device in such applications.
  • The SI7101DN-T1-GE3 is a lead-free device and should be soldered using a lead-free soldering process. The recommended soldering temperature is 260°C (500°F) for a maximum of 10 seconds. For rework, use a low-temperature soldering iron and a solder wick to remove excess solder.

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SI7101DN-T1-GE3 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI710, or try a keyword search, such as Power Field-Effect Transistors

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