Part Image

SI7102DN-T1-GE3 - Vishay

Description: VISHAY - SI7102DN-T1-GE3 - MOSFET, N CHANNEL, 12V, 35A, POWERPAK 12

Download SI7102DN-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI7102DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8-SINGLE
click to zoom
3D Models
SI7102DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK-1212-8-SINGLE
click to zoom

SI7102DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7102DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7102DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are suggested. Refer to the application note AN-1152 for more details.
  • The device requires a stable voltage supply and proper biasing to ensure optimal performance. A 5V ±10% supply voltage is recommended, and the input voltage should be filtered to minimize noise. Refer to the application note AN-1153 for biasing and filtering guidelines.
  • Handle the device by the body or pins, avoiding direct contact with the die. Use an anti-static wrist strap or mat, and store the device in an anti-static bag or tube. Follow the ESD Association standard ANSI/ESD S20.20 for handling and storage guidelines.
  • Yes, the SI7102DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is manufactured in an IATF 16949 certified facility. However, additional testing and validation may be required for specific applications.
  • A soldering profile with a peak temperature of 260°C (500°F) and a dwell time of 10-30 seconds is recommended. Avoid exceeding 280°C (536°F) to prevent damage to the device. Refer to the application note AN-1151 for more details on soldering and assembly guidelines.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI7102DN-T1-GE3 Overview

Use the download button to access the SI7102DN-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI710, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7102DN-T1-GE3

Showing 0 results