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SI7106DN-T1-GE3 - Vishay

Description: MOSFET 20V Vds 12V Vgs PowerPAK 1212-8

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SI7106DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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SI7106DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2
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SI7106DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7106DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    12.5 A

  • Drain-source On Resistance-Max:

    0.0062 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7106DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device on a thermal pad with a large copper area, using thermal vias to dissipate heat, and keeping the surrounding components at a safe distance to ensure good airflow.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable thermal interface material, and provide adequate heat sinking and airflow around the device.
  • When handling the SI7106DN-T1-GE3, it's crucial to follow proper ESD protection procedures, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging to prevent damage from electrostatic discharge.
  • Yes, the SI7106DN-T1-GE3 is suitable for high-reliability and automotive applications due to its high-quality manufacturing process, robust design, and compliance with relevant industry standards such as AEC-Q101.
  • To troubleshoot issues with the SI7106DN-T1-GE3, start by reviewing the datasheet and application notes, checking the PCB layout and assembly, verifying the input and output signals, and using diagnostic tools such as oscilloscopes or logic analyzers to identify the root cause of the problem.

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SI7106DN-T1-GE3 Overview

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