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SI7108DN-T1-GE3 - Vishay

Description: MOSFETs 20V 22A 3.8W 4.9mohm @ 10V

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SI7108DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7108DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7108DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7108DN-T1-GE3 is a standard QFN16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's support team.
  • To ensure reliability in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the device within its recommended operating temperature range (–40°C to 150°C). Additionally, consider using a thermally conductive PCB material and ensure good airflow around the device.
  • The maximum allowed voltage on the SI7108DN-T1-GE3's input pins is 5.5 V. Exceeding this voltage may cause permanent damage to the device. It is essential to ensure that the input voltage does not exceed the recommended maximum rating to prevent damage or malfunction.
  • To prevent electrostatic discharge (ESD) damage, it is crucial to follow proper handling and storage procedures. Use an ESD wrist strap or mat, store the devices in anti-static packaging, and avoid touching the device's pins or exposed internal components. Additionally, ensure that the PCB design includes adequate ESD protection circuitry.
  • The recommended storage condition for the SI7108DN-T1-GE3 is in a dry, cool place with a temperature range of 5°C to 30°C and relative humidity below 60%. Avoid storing the devices in direct sunlight, high-temperature environments, or areas with high humidity.

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SI7108DN-T1-GE3 Overview

Use the download button to access the SI7108DN-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SI710, or try a keyword search, such as Power Field-Effect Transistors

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