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SI7113ADN-T1-GE3 - Vishay

Description: MOSFET -100V Vds 20V Vgs PowerPAK 1212-8

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SI7113ADN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7113ADN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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SI7113ADN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2
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SI7113ADN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7113ADN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10.8 A

  • Drain-source On Resistance-Max:

    0.132 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7113ADN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7113ADN-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple the power supply lines with a 10 μF capacitor. Additionally, ensure the output pin (VOUT) is connected to a load impedance of at least 1 kΩ.
  • The SI7113ADN-T1-GE3 has an operating temperature range of -40°C to 150°C, with a junction temperature (TJ) of up to 150°C.
  • Yes, the SI7113ADN-T1-GE3 is qualified for automotive and high-reliability applications, meeting the requirements of AEC-Q100 and IATF 16949 standards.
  • To prevent ESD damage, handle the SI7113ADN-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device pins or handling the device in a non-ESD-controlled environment.

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SI7113ADN-T1-GE3 Overview

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