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SI7113DN-T1-E3 - Vishay

Description: Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R

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SI7113DN-T1-E3 - Vishay - PCB symbol
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SI7113DN-T1-E3 - Vishay PCB footprint - Other - Other - SI7113DN-T1-E3-3
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SI7113DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7113DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, POWERPAK 1212-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    13.2 A

  • Drain-source On Resistance-Max:

    0.134 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    38 ns

SI7113DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7113DN-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ground. Additionally, ensure the enable pin (EN) is tied to a logic-level signal or grounded for proper operation.
  • The SI7113DN-T1-E3 is rated for operation from -40°C to 125°C (junction temperature). However, the device's performance may degrade at extreme temperatures. It's essential to ensure proper thermal management and heat dissipation in your design.
  • While the SI7113DN-T1-E3 is a high-performance device, it is not specifically designed for high-reliability or automotive applications. For such applications, consider using devices with specific automotive or high-reliability certifications, such as AEC-Q100 or MIL-STD-883.
  • To prevent electrostatic discharge (ESD) damage, handle the SI7113DN-T1-E3 by the body or use an ESD wrist strap or mat. Ensure your workspace and tools are ESD-safe, and avoid touching the device's pins or internal components.

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SI7113DN-T1-E3 Overview

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