SI7113DN-T1-GE3 - Vishay

SI7113DN-T1-GE3 Details

• Manufacturer Part Number:

  SI7113DN-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Package Description:

  ROHS COMPLIANT, 1212-8, POWERPAK-8

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  11.25 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  13.2 A

• Drain-source On Resistance-Max:

  0.134 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  S-PDSO-F5

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  5

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -50 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  52 W

• Pulsed Drain Current-Max (IDM):

  20 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  FLAT

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  80 ns

• Turn-on Time-Max (ton):

  38 ns