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SI7116BDN-T1-GE3 - Vishay

Description: N-Channel 40 V 18.4A (Ta), 65A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® 1212-8

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SI7116BDN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7116BDN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2020-10-18

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.0074 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    140 ns

SI7116BDN-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper area for the drain pad, and to connect it to a solid ground plane. This helps to dissipate heat efficiently. Additionally, it's recommended to use thermal vias to connect the drain pad to the bottom layer of the PCB, which can further improve thermal performance.
  • To ensure the device is properly biased for optimal performance, it's essential to follow the recommended biasing conditions outlined in the datasheet. This includes setting the gate-source voltage (VGS) within the recommended range, typically between 2V to 5V, and ensuring the drain-source voltage (VDS) is within the specified range. Additionally, it's crucial to provide a stable and low-impedance power supply to the device.
  • When handling the SI7116BDN-T1-GE3, it's essential to take precautions to prevent damage. This includes avoiding excessive mechanical stress, such as bending or flexing the leads, and preventing exposure to moisture or high temperatures. It's also recommended to handle the device by the body, rather than the leads, and to use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage.
  • To determine the suitable heat sink for the SI7116BDN-T1-GE3, you'll need to consider the device's power dissipation, thermal resistance, and the maximum operating temperature. The datasheet provides the thermal resistance (RθJA) and the maximum junction temperature (TJ). You can use these values to calculate the required heat sink thermal resistance and size. Additionally, you can consult with heat sink manufacturers or use online heat sink calculators to find a suitable heat sink for your application.
  • The possible failure modes of the SI7116BDN-T1-GE3 include overvoltage, overcurrent, overheating, and electrostatic discharge (ESD) damage. To mitigate these failure modes, it's essential to ensure the device is operated within the recommended specifications, provide adequate heat sinking, and use protective circuits such as overvoltage protection (OVP) and overcurrent protection (OCP) devices. Additionally, it's recommended to follow proper handling and storage procedures to prevent ESD damage.

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SI7116BDN-T1-GE3 Overview

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