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SI7116DN-T1-E3 - Vishay

Description: MOSFET

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SI7116DN-T1-E3 - Vishay - PCB symbol
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SI7116DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SI7116DN-T1-E3 - Vishay - 3D model - Other - PowerPAK SO-8 Single
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SI7116DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7116DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    10.5 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7116DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7116DN-T1-E3 is a 5x5 mm QFN package with a 0.5 mm pitch. A minimum of 2 mm clearance around the device is recommended for thermal and electrical considerations.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Additionally, provide adequate thermal management, such as heat sinks or thermal interfaces, to maintain a safe operating temperature.
  • The SI7116DN-T1-E3 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • The SI7116DN-T1-E3 is a commercial-grade device, but it can be used in high-reliability or aerospace applications with proper qualification and testing. Consult with Vishay Intertechnologies or a qualified reliability engineer to determine the device's suitability for your specific application.
  • The recommended soldering profile for the SI7116DN-T1-E3 is a reflow soldering process with a peak temperature of 260°C for 20-30 seconds. Ensure that the device is soldered in accordance with the IPC-J-STD-020 standard.

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SI7116DN-T1-E3 Overview

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SI7116DN-T1-E3 Alternates

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Power Field-Effect Transistor, 10.5A I(D), 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image SI7116DN-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 10.5A I(D), 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET