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SI7129DN-T1-GE3 - Vishay

Description: Vishay SI7129DN-T1-GE3 P-channel MOSFET Transistor, 11.5 A, -30 V, 8-Pin PowerPAK 1212

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Symbol
SI7129DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7129DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2-3
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3D Models
SI7129DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2-3
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SI7129DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7129DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    31.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0114 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52.1 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7129DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7129DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the power supply with a 10uF capacitor to minimize noise and ensure stable operation.
  • The maximum allowed power dissipation for the SI7129DN-T1-GE3 is 250mW. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • The SI7129DN-T1-GE3 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal resistance when designing for high-temperature applications. Ensure proper heat sinking and thermal management to prevent overheating.
  • To protect the SI7129DN-T1-GE3 from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure the PCB design includes ESD protection diodes and resistors, and consider adding a TVS (transient voltage suppressor) for added protection.

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SI7129DN-T1-GE3 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI712, or try a keyword search, such as Power Field-Effect Transistors

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