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SI7137DP-T1-GE3 - Vishay

Description: MOSFET -20V Vds 12V Vgs PowerPAK SO-8

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SI7137DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single
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SI7137DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single
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SI7137DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7137DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.00195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7137DP-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7137DP-T1-GE3 should include a solid ground plane, wide copper traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure the device is operated within its specified temperature range (up to 150°C). Implement proper thermal management, such as heat sinks or thermal interfaces, and consider derating the device's power handling capabilities at elevated temperatures.
  • The SI7137DP-T1-GE3 has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, handle the device by the body or pins, and avoid touching the die or wire bonds. Store the device in an anti-static bag or container when not in use.
  • While the SI7137DP-T1-GE3 is a high-performance device, it may not meet the specific requirements for high-reliability or aerospace applications. Consult with Vishay Intertechnologies or a qualified reliability engineer to determine the device's suitability for your specific application.
  • Use a soldering iron with a temperature range of 250°C to 260°C, and a solder with a melting point above 217°C. Apply a small amount of solder paste to the PCB pads, and use a reflow oven or hot air soldering technique to assemble the device.

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SI7137DP-T1-GE3 Overview

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