Part Image

SI7145DP-T1-GE3 - Vishay

Description: VISHAY - SI7145DP-T1-GE3 - MOSFET, P-CH, -30V, -60A, POWERPAK SO

Download SI7145DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI7145DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
click to zoom
3D Models
SI7145DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
click to zoom

SI7145DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7145DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    36.5 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7145DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7145DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Also, follow proper thermal management practices, such as providing adequate heat sinking and airflow, to prevent overheating.
  • The maximum allowed voltage on the VIN pin of the SI7145DP-T1-GE3 is 5.5V. Exceeding this voltage may damage the device.
  • Yes, the SI7145DP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q100 and is PPAP capable.
  • To troubleshoot issues with the SI7145DP-T1-GE3, start by verifying the input voltage, output voltage, and current consumption. Check for proper PCB layout, decoupling, and thermal management. Consult the datasheet and application notes for guidance on troubleshooting and debugging.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI7145DP-T1-GE3 Overview

Use the download button to access the SI7145DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI714, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7145DP-T1-GE3

Showing 0 results