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SI7149ADP-T1-GE3 - Vishay

Description: Vishay SI7149ADP-T1-GE3 P-channel MOSFET Transistor, 18.4 A, -30 V, 8-Pin PowerPAK SO

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SI7149ADP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7149ADP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8
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SI7149ADP-T1-GE3 - Vishay - 3D model - Other - PowerPAK SO-8
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SI7149ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7149ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    31.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7149ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are suggested. Refer to the application note AN-1152 for more details.
  • The device requires a stable input voltage (VIN) between 4.5V to 18V. Ensure the input capacitor (CIN) is placed close to the VIN pin and has a low ESR. A 1μF to 10μF capacitor is recommended. Refer to the application note AN-1152 for more details.
  • The maximum allowed current through the device is 1.5A. Exceeding this limit may cause the device to overheat or fail. Ensure the device is properly heatsinked and the PCB is designed to handle the maximum current.
  • Use a TVS diode or a zener diode to protect the device from overvoltage. For ESD protection, use a device with a human-body model (HBM) rating of 2kV or higher. Ensure the PCB is designed with ESD protection in mind, including proper grounding and shielding.
  • The recommended storage temperature range for the device is -40°C to 125°C. Storing the device outside this range may affect its performance or lifespan.

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SI7149ADP-T1-GE3 Overview

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