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SI7149DP-T1-GE3 - Vishay

Description: VISHAY - SI7149DP-T1-GE3 - MOSFET, P CH, 30V, 50A, PPAK SO8

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SI7149DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-2
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SI7149DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7149DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    23.7 A

  • Drain-source On Resistance-Max:

    0.0052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7149DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7149DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the VOUT pin to a capacitor (e.g., 1uF) to ground. Additionally, ensure the EN pin is tied to a logic-level signal (e.g., 3.3V or 5V) to enable the device.
  • The maximum allowed power dissipation for the SI7149DP-T1-GE3 is 1.4W. Ensure that the device is properly heat-sinked and the ambient temperature is within the recommended operating range to avoid overheating.
  • The SI7149DP-T1-GE3 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal resistance when operating in high-temperature environments to avoid overheating and ensure reliable operation.
  • To troubleshoot issues with the SI7149DP-T1-GE3, start by verifying the power supply voltage, checking for proper biasing, and ensuring the EN pin is properly driven. Use an oscilloscope to monitor the output voltage and current. Consult the datasheet and application notes for additional guidance.

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SI7149DP-T1-GE3 Overview

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