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SI7153DN-T1-GE3 - Vishay

Description: MOSFET -30V Vds 25V Vgs PowerPAK 1212-8

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SI7153DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7153DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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3D Models
SI7153DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK 1212-8 Single
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SI7153DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7153DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    11.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    390 pF

  • JESD-30 Code:

    S-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    45 ns

SI7153DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7153DN-T1-GE3 is a standard QFN16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81193.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note AN81193. Additionally, use a solder paste with a melting point between 217°C to 220°C and a peak temperature of 240°C to 250°C.
  • The SI7153DN-T1-GE3 has an operating temperature range of -40°C to 150°C. However, the device can be stored at temperatures between -55°C to 150°C.
  • Handle the SI7153DN-T1-GE3 by the package body only, avoiding touching the leads or electrical contacts. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage. Store the devices in their original packaging or in a low-humidity environment to prevent moisture damage.
  • The recommended power-up sequence for the SI7153DN-T1-GE3 is to apply the power supply voltage (VCC) before the input signals. Ensure that the input signals are stable and within the recommended operating range before applying VCC.

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SI7153DN-T1-GE3 Overview

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