SI7155DP-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SI7155DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single-2022

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3D Models

SI7155DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK SO-8 Single-2022

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Datasheet Download Datasheet
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Part Number SI7155DP-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (P-Channel)
Package Category Other
Footprint Name Other - PowerPAK SO-8 Single-2022
Released Date Nov 19, 2022
Last Modified Date Aug 1, 2024 3:50 PM UTC
Pinout / Pin List Click Here (Member Only)

SI7155DP-T1-GE3 Details

Manufacturer Part Number:
SI7155DP-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
SOP-8
Reach Compliance Code:
Not Compliant
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.6
Avalanche Energy Rating (Eas):
125 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
100 A
Drain-source On Resistance-Max:
0.0046 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
1370 pF
JESD-30 Code:
R-PDSO-F5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
104 W
Pulsed Drain Current-Max (IDM):
200 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
FLAT
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
420 ns
Turn-on Time-Max (ton):
116 ns

SI7155DP-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI7155DP-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5 V and 5.5 V, and the VOUT pin to a load or a voltage regulator. Ensure the input voltage is within the recommended operating range and the output voltage is within the specified output voltage range.
The maximum allowed power dissipation for the SI7155DP-T1-GE3 is 1.4 W at a junction temperature of 150°C. Ensure proper thermal design and heat sinking to prevent overheating.
The SI7155DP-T1-GE3 is rated for operation up to 150°C junction temperature. However, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
To prevent ESD damage, handle the SI7155DP-T1-GE3 with ESD-protective equipment, such as wrist straps or mats. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to protect the device from electrostatic discharge.

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SI7155DP-T1-GE3 Overview

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SI7155DP-T1-GE3 - Vishay

SI7155DP-T1-GE3 Details

SI7155DP-T1-GE3 Frequently Asked Questions (FAQs)

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SI7155DP-T1-GE3 Overview

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