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SI7157DP-T1-GE3 - Vishay

Description: VISHAY - SI7157DP-T1-GE3 - MOSFET, P-CH, -20V, -60A, POWERPAK SO-8

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PCB Footprints
SI7157DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8
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SI7157DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8
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SI7157DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7157DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    61.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7157DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7157DP-T1-GE3 is a standard QFN16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note 'QFN16 Land Pattern' (document number: 81011).
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note 'Soldering Guidelines for QFN Packages' (document number: 81012). Additionally, use a solder paste with a melting point between 217°C to 220°C and a peak temperature of 240°C to 250°C.
  • The SI7157DP-T1-GE3 has an operating temperature range of -40°C to 150°C. However, the device can be stored at temperatures between -55°C to 150°C.
  • Handle the SI7157DP-T1-GE3 by the package body only, avoiding touching the leads or electrical contacts. Store the devices in their original packaging or in a dry, ESD-protected environment at a temperature range of -40°C to 30°C and relative humidity below 60%.
  • The SI7157DP-T1-GE3 has an integrated ESD protection circuit, but it is still recommended to follow standard ESD handling and storage procedures to prevent damage. Use an ESD wrist strap or mat, and ensure all equipment and tools are properly grounded.

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SI7157DP-T1-GE3 Overview

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