Part Image

SI7164DP-T1-GE3 - Vishay

Description: Vishay SI7164DP-T1-GE3 N-channel MOSFET Transistor, 60 A, 60 V, 8-Pin PowerPAK SO

Download SI7164DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI7164DP-T1-GE3 - Vishay PCB footprint - Other - Other - Power PAK® SO-8 Single_1
click to zoom
3D Models
SI7164DP-T1-GE3 - Vishay  - 3D model - Other - Power PAK® SO-8 Single_1
click to zoom

SI7164DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7164DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    23.5 A

  • Drain-source On Resistance-Max:

    0.00625 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    PURE MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7164DP-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7164DP-T1-GE3 should include a solid ground plane, wide copper traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The SI7164DP-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage. The device is also sensitive to moisture, so ensure proper storage and handling in a dry environment.
  • The SI7164DP-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or aerospace applications with proper qualification and testing. Consult with Vishay Intertechnologies for specific requirements and guidelines for these applications.
  • Follow the recommended soldering and rework conditions outlined in the datasheet, including peak temperatures, soldering times, and rework techniques. Ensure that the device is not exposed to excessive temperatures or thermal shocks during the soldering process.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI7164DP-T1-GE3 Overview

Use the download button to access the SI7164DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI716, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7164DP-T1-GE3

Showing 0 results