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SI7172DP-T1-GE3 - Vishay

Description: MOSFET 200V Vds 20V Vgs PowerPAK SO-8

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SI7172DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8.
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SI7172DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8.
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SI7172DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7172DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5.9 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7172DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7172DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note AN81193.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure that the device is operated within the recommended operating temperature range of -40°C to 150°C, and that the maximum junction temperature (Tj) is not exceeded.
  • To minimize EMI and noise, it is recommended to follow good PCB layout and routing practices, such as keeping the device's power and ground pins as close as possible, using a solid ground plane, and minimizing the length of the traces connected to the device's pins.
  • Yes, the SI7172DP-T1-GE3 is AEC-Q100 qualified, which means it is suitable for use in automotive applications. However, it is recommended to consult with Vishay Intertechnologies' application engineers to ensure that the device meets the specific requirements of the application.
  • To troubleshoot issues with the SI7172DP-T1-GE3, it is recommended to consult the datasheet and application notes, and to use standard debugging techniques such as checking the device's pinouts, voltage levels, and signal integrity. Additionally, Vishay Intertechnologies' application engineers can provide support and guidance.

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