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- Part Number SI7178DP-T1-GE3
- Manufacturer Vishay
- Pin Count 9
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - SI7178DP-T1-GE3-1
- Released Date May 25, 2021
- Last Modified Date Jun 22, 2023 10:55 AM UTC
- Pinout / Pin List Click Here (Member Only)
SI7178DP-T1-GE3 Details
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Manufacturer Part Number:
SI7178DP-T1-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Obsolete
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Package Description:
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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ECCN Code:
EAR99
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
0
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Avalanche Energy Rating (Eas):
80 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
100 V
SI7178DP-T1-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SI7178DP-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
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To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple the power supply lines with 10 uF and 100 nF capacitors. Additionally, ensure the output pin (VOUT) is connected to a load impedance of at least 1 kΩ.
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The SI7178DP-T1-GE3 is rated for operation from -40°C to 150°C (junction temperature). However, for optimal performance and reliability, it is recommended to operate the device within the -20°C to 125°C range.
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Yes, the SI7178DP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is manufactured with a high-reliability process.
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The SI7178DP-T1-GE3 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.
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SI7178DP-T1-GE3 Overview
Use the download button to access the SI7178DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
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