Part Image

SI7192DP-T1-GE3 - Vishay

Description: MOSFET 30V 60A 104W 1.9mohm @ 10V

Download SI7192DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI7192DP-T1-GE3 - Vishay PCB footprint - Other - Other - SI7192DP-T1-GE3-1
click to zoom
3D Models
SI7192DP-T1-GE3 - Vishay  - 3D model - Other - SI7192DP-T1-GE3-1
click to zoom

SI7192DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7192DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.00225 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7192DP-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7192DP-T1-GE3 should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating guidelines for the device. Additionally, consider using a thermocouple or thermistor to monitor the device temperature.
  • The SI7192DP-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage.
  • The SI7192DP-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers other variants with enhanced reliability and automotive-grade options. Consult with Vishay's application engineers to determine the best device for your specific requirements.
  • Follow the recommended soldering profile for the SI7192DP-T1-GE3, with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. For rework, use a low-temperature soldering iron and a thermally conductive rework station to prevent damage.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI7192DP-T1-GE3 Overview

Use the download button to access the SI7192DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI719, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7192DP-T1-GE3

Showing 0 results