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SI7212DN-T1-GE3 - Vishay

Description: VISHAY - SI7212DN-T1-GE3 - Dual MOSFET, N Channel, 30 V, 4.9 A, 0.03 ohm, PowerPAK 1212, Surface Mount

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SI7212DN-T1-GE3 - Vishay PCB footprint - Other - Other - SI7212DN-T1-GE3-4
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SI7212DN-T1-GE3 - Vishay  - 3D model - Other - SI7212DN-T1-GE3-4
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SI7212DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7212DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.9 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7212DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7212DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.
  • The maximum allowed current through the SI7212DN-T1-GE3's output pins is 20mA. Exceeding this limit may cause damage to the device or affect its reliability.
  • To protect the SI7212DN-T1-GE3 from ESD and overvoltage, use a TVS diode or a transient voltage suppressor on the input pins. Additionally, consider adding a series resistor and a capacitor to the input pins to filter out noise and transients.
  • The SI7212DN-T1-GE3 is rated for operation from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures. Ensure proper thermal management and consider derating the device's specifications for high-temperature applications.

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SI7212DN-T1-GE3 Overview

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