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SI7216DN-T1-GE3 - Vishay

Description: MOSFET 40V Vds 20V Vgs PowerPAK 1212-8

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SI7216DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8
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SI7216DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK-1212-8
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SI7216DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7216DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7216DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7216DN-T1-GE3 should include a solid ground plane, wide copper traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's current handling capability according to the temperature derating curve provided in the datasheet.
  • The SI7216DN-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage. The device is rated for human body model (HBM) ESD protection up to 2 kV.
  • Yes, the SI7216DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured in an IATF 16949 certified facility. However, additional testing and validation may be required for specific applications.
  • The SI7216DN-T1-GE3 is a lead-free device and should be soldered using a lead-free soldering process. The recommended soldering temperature is 260°C (500°F) for a maximum of 10 seconds. For rework, use a low-temperature soldering iron and a solder wick or vacuum desoldering tool to avoid damaging the device.

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SI7216DN-T1-GE3 Overview

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Part Image SI7216DN-T1-E3 Vishay Siliconix

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