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SI7252ADP-T1-GE3 - Vishay

Description: MOSFET DUAL N-CHANNEL 100V 9.3A (D-S) MOSFET

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SI7252ADP-T1-GE3 - Vishay PCB footprint - Other - Other - SI7252ADP-T1-GE3-5
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SI7252ADP-T1-GE3 - Vishay  - 3D model - Other - SI7252ADP-T1-GE3-5
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SI7252ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7252ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.3 A

  • Drain-source On Resistance-Max:

    0.0225 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33.8 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    36 ns

SI7252ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7252ADP-T1-GE3 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the ambient temperature.
  • The SI7252ADP-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap, mat, or workstation, and follow standard ESD handling procedures to prevent damage.
  • The SI7252ADP-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade products. For high-reliability or aerospace applications, consider using a device specifically designed and qualified for those markets, such as the JAN, JANTX, or JANS versions.
  • Use a soldering iron with a temperature range of 250°C to 260°C, and a solder with a melting point above 217°C. Follow standard SMT assembly techniques, and ensure the device is properly aligned and secured during the assembly process.

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SI7252ADP-T1-GE3 Overview

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