SI7252DP-T1-GE3 footprint, schematic symbol and 3D model by Vishay

Symbol

click to zoom

PCB Footprints

SI7252DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-SO8_1

click to zoom

3D Models

SI7252DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK-SO8_1

click to zoom

Datasheet Download Datasheet
Stock & Prices Price & Stock for SI7252DP-T1-GE3
Part Number SI7252DP-T1-GE3
Manufacturer Vishay
Pin Count 8
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK-SO8_1
Released Date Oct 31, 2018
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI7252DP-T1-GE3 Details

Manufacturer Part Number:
SI7252DP-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Package Description:
SOP-8
ECCN Code:
EAR99
Factory Lead Time:
29 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
20 mJ
Case Connection:
DRAIN
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
36.7 A
Drain-source On Resistance-Max:
0.017 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-C6
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
80 A
Surface Mount:
YES
Terminal Finish:
MATTE TIN
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SI7252DP-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI7252DP-T1-GE3 is a standard SO-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF ceramic capacitor to reduce noise and ensure stable operation.
The maximum allowed power dissipation for the SI7252DP-T1-GE3 is 1.4W. Ensure that the device is properly heat-sinked and the ambient temperature is within the recommended operating range to prevent overheating.
Yes, the SI7252DP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, ensure that you follow the recommended operating conditions and guidelines for your specific application.
To troubleshoot issues with the SI7252DP-T1-GE3, start by verifying the power supply and ground connections. Check for proper biasing, decoupling, and heat sinking. Use an oscilloscope to monitor the input and output signals, and consult the datasheet and application notes for guidance on troubleshooting common issues.

Trust Checks

Expert Contribution

System Verified

Community Approved

SI7252DP-T1-GE3 Overview

Use the download button to access the SI7252DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.

To find more CAD model downloads similar to this part, try a partial part number search, like SI725, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7252DP-T1-GE3

Showing 0 results


Please enter a minimum 3 letters or numbers
← Prev Next →

SI7252DP-T1-GE3 - Vishay

SI7252DP-T1-GE3 Details

SI7252DP-T1-GE3 Frequently Asked Questions (FAQs)

Trust Checks

SI7252DP-T1-GE3 Overview

Parts related to SI7252DP-T1-GE3