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SI7309DN-T1-E3 - Vishay

Description: MOSFET -60V Vds 20V Vgs PowerPAK 1212-8

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SI7309DN-T1-E3 - Vishay PCB footprint - Other - Other - SI7309DN-T1-E3-3
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SI7309DN-T1-E3 - Vishay  - 3D model - Other - SI7309DN-T1-E3-3
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SI7309DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7309DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    19.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7309DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7309DN-T1-E3 is a 5x5 mm QFN package with a 0.5 mm pitch. A minimum of 2 mm clearance around the device is recommended for thermal and electrical considerations.
  • To ensure the device operates within the recommended junction temperature range (TJ = -40°C to 150°C), provide adequate heat sinking, use a thermal interface material, and follow proper PCB design and layout guidelines.
  • The maximum allowed voltage on the VIN pin is 5.5V. Exceeding this voltage may damage the device. Ensure the input voltage is within the recommended range (2.7V to 5.5V) for proper operation.
  • Yes, the SI7309DN-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard and is PPAP capable. However, ensure you follow the recommended design and testing guidelines for your specific application.
  • To troubleshoot issues, verify the input voltage, check for proper pin connections, and ensure the device is not overheating. Also, review the datasheet and application notes for proper device operation and configuration.

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SI7309DN-T1-E3 Overview

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