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SI7309DN-T1-GE3 - Vishay

Description: MOSFET -60V Vds 20V Vgs PowerPAK 1212-8

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SI7309DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7309DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8_2021_1
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SI7309DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK 1212-8_2021_1
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SI7309DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7309DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    0.115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    19.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7309DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7309DN-T1-GE3 is a 5x5 mm QFN package with a 0.5 mm pitch. A detailed footprint recommendation can be found in the Vishay Intertechnologies application note AN81142.
  • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note AN81142. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
  • The SI7309DN-T1-GE3 has an operating temperature range of -40°C to 125°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
  • Yes, the SI7309DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q100 standard and is PPAP capable. However, additional testing and validation may be required for specific applications.
  • To prevent ESD damage, handle the SI7309DN-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in a conductive bag or tube when not in use.

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SI7309DN-T1-GE3 Overview

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