HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Avalanche Energy Rating (Eas):
0.8 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
150 V
Drain Current-Max (ID):
1.1 A
Drain-source On Resistance-Max:
1.3 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Pulsed Drain Current-Max (IDM):
2 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SI7317DN-T1-GE3 Frequently Asked Questions (FAQs)
The recommended PCB footprint for the SI7317DN-T1-GE3 is a 5x5 mm QFN package with a 0.5 mm pitch. A detailed footprint recommendation can be found in the Vishay Intertechnologies application note AN81142.
To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note AN81142. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
The SI7317DN-T1-GE3 has an operating temperature range of -40°C to 150°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
Yes, the SI7317DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard and is PPAP capable. However, additional testing and validation may be required for specific applications.
To prevent ESD damage, handle the SI7317DN-T1-GE3 with ESD-protective equipment and follow proper ESD handling procedures. The device has an HBM ESD rating of 2 kV and a CDM ESD rating of 1 kV.
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SI7317DN-T1-GE3 Overview
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