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SI7414DN-T1-E3 - Vishay

Description: MOSFET 60V Vds 20V Vgs PowerPAK 1212-8

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SI7414DN-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI7414DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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SI7414DN-T1-E3 - Vishay - 3D model - Other - PowerPAK 1212-8 Single
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SI7414DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7414DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7414DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7414DN-T1-E3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source through a 1kΩ to 10kΩ resistor. The output pin (pin 2) should be connected to a load or a voltage follower. A 0.1μF to 1μF decoupling capacitor is recommended between the input pin and GND to reduce noise.
  • The SI7414DN-T1-E3 is rated for operation from -55°C to 150°C (TJ). However, for optimal performance and reliability, it is recommended to operate the device within a temperature range of -40°C to 125°C.
  • Yes, the SI7414DN-T1-E3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured in accordance with IATF 16949:2016 standards.
  • To prevent electrostatic discharge (ESD) damage, handle the SI7414DN-T1-E3 with ESD-protective equipment, such as wrist straps, mats, or bags. Ensure that the device is stored in a conductive bag or tube to prevent static buildup.

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SI7414DN-T1-E3 Overview

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Part Image SI7414DN-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET