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SI7415DN-T1-GE3 - Vishay

Description: VISHAY - SI7415DN-T1-GE3 - MOSFET, P CH, 60V, 3.6A, PPAK SO8

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PCB Footprints
SI7415DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8-SINGLE
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SI7415DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK-1212-8-SINGLE
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SI7415DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7415DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    FAST SWITCHING

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7415DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7415DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ground. Additionally, ensure the input and output pins are not overloaded, and the device is operated within the recommended temperature range.
  • The maximum allowed power dissipation for the SI7415DN-T1-GE3 is 1.4W. To ensure reliable operation, the device should be operated at a maximum junction temperature of 150°C. A thermal derating of 12.5mW/°C is recommended above 25°C.
  • Yes, the SI7415DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is manufactured with a high-reliability process. However, it's essential to consult with Vishay Intertechnologies for specific application requirements and qualification.
  • The SI7415DN-T1-GE3 has an integrated ESD protection diode. However, it's still essential to follow proper ESD handling procedures when handling the device, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag or container.

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SI7415DN-T1-GE3 Overview

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Part Image SI7415DN-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7415DN-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET