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SI7423DN-T1-E3 - Vishay

Description: Trans MOSFET P-CH 30V 7.4A 8-Pin PowerPAK 1212 T/R

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SI7423DN-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI7423DN-T1-E3 - Vishay PCB footprint - Other - Other - SI7423DN-T1-E3-3
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SI7423DN-T1-E3 - Vishay - 3D model - Other - SI7423DN-T1-E3-3
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SI7423DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7423DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.4 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    185 ns

  • Turn-on Time-Max (ton):

    35 ns

SI7423DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7423DN-T1-E3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size and a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source through a current-limiting resistor, and connect the output pin (pin 2) to a load or a voltage divider. The datasheet provides a typical application circuit and recommended component values.
  • The maximum power dissipation of the SI7423DN-T1-E3 is 1.4W at an ambient temperature of 25°C. However, the actual power dissipation will depend on the operating conditions, such as input voltage, output current, and ambient temperature.
  • The SI7423DN-T1-E3 is a general-purpose N-channel MOSFET with a relatively low gate charge and a moderate switching speed. While it can be used in high-frequency applications, it may not be the best choice for very high-frequency or high-power applications. Consult the datasheet for more information on the device's frequency response and switching characteristics.
  • To protect the SI7423DN-T1-E3 from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure that the PCB and components are properly grounded, and use ESD-sensitive handling and storage procedures.

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SI7423DN-T1-E3 Overview

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