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SI7460DP-T1-GE3 - Vishay

Description: VISHAY - SI7460DP-T1-GE3 - MOSFET, N-CH, 60V, 11A, POWERPAK SO-8

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SI7460DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7460DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SI7460DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7460DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7460DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0096 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5.4 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7460DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7460DP-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 2.9mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor.
  • The SI7460DP-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal thermal performance and to prevent overheating.
  • To protect the SI7460DP-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range.
  • The thermal derating curve for the SI7460DP-T1-GE3 is typically 1.5% per degree Celsius above 25°C. This means that for every 1°C increase in temperature above 25°C, the maximum output current capability decreases by 1.5%.

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SI7460DP-T1-GE3 Overview

Use the download button to access the SI7460DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI746, or try a keyword search, such as Power Field-Effect Transistors

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Part Image SI7460DP-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET