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SI7461DP-T1-E3 - Vishay

Description: SI7461DP-T1-E3 P-Channel MOSFET, 8.6 A, 60 V, 8-Pin SOIC Vishay

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SI7461DP-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8
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SI7461DP-T1-E3 - Vishay  - 3D model - Other - PowerPAK SO-8
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SI7461DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7461DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, POWERPAK, SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8.6 A

  • Drain-source On Resistance-Max:

    0.0145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5.4 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7461DP-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7461DP-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI7461DP-T1-E3 is rated for operation in ambient temperatures ranging from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures.
  • Yes, the SI7461DP-T1-E3 is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required reliability standards.
  • The SI7461DP-T1-E3 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe to prevent damage to the device.

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SI7461DP-T1-E3 Overview

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Part Image SI7461DP-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 8.6A I(D), 60V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET