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SI7461DP-T1-GE3 - Vishay

Description: MOSFET -60V Vds 20V Vgs PowerPAK SO-8

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SI7461DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7461DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SI7461DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7461DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7461DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8.6 A

  • Drain-source On Resistance-Max:

    0.0145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5.4 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI7461DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7461DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI7461DP-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and to prevent overheating.
  • To protect the SI7461DP-T1-GE3 from overvoltage, add a TVS diode or a zener diode in parallel with the input pin (VIN). For overcurrent protection, add a current-limiting resistor or a PTC fuse in series with the output pin (VOUT).
  • The SI7461DP-T1-GE3 is rated for operation from -40°C to 125°C. However, it's recommended to operate the device within a temperature range of -20°C to 85°C for optimal performance and reliability.

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SI7461DP-T1-GE3 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI746, or try a keyword search, such as Power Field-Effect Transistors

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SI7461DP-T1-GE3 Alternates

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Part Image SI7461DP-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 8.6A I(D), 60V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET