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SI7463ADP-T1-GE3 - Vishay

Description: VISHAY - SI7463ADP-T1-GE3 - MOSFET, P-CH, -40V, -46A, POWERPAK SO

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PCB Footprints
SI7463ADP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single1
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SI7463ADP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single1
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SI7463ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7463ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7463ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7463ADP-T1-GE3 can be found in the Vishay Intertechnologies' application note AN82141, which provides a detailed layout and land pattern design guide.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowed voltage transient for the SI7463ADP-T1-GE3 is specified as 80 V for a duration of 100 ns, as stated in the datasheet. However, it is recommended to consult with Vishay Intertechnologies' application engineers for specific guidance on voltage transient tolerance.
  • Yes, the SI7463ADP-T1-GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications. However, it is recommended to consult with Vishay Intertechnologies' application engineers to ensure compliance with specific automotive industry standards and requirements.
  • The recommended storage and handling procedure for the SI7463ADP-T1-GE3 can be found in the Vishay Intertechnologies' document 'Moisture Sensitivity and Storage of Semiconductor Devices', which provides guidelines for handling and storing moisture-sensitive devices.

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